Semiconductor device and production method therefor

ABSTRACT

A semiconductor device includes a semiconductor chip, a lead arranged on a side portion of the semiconductor chip, and a wire, whose one end and another end are bonded to the semiconductor chip and the lead respectively, having a ball portion and a stitch portion wedged in side elevational view on the semiconductor chip and the lead respectively. An angle of approach of the wire to the lead is not less than 50°, and the length of the stitch portion is not less than 33 μm.

TECHNICAL FIELD

The present invention relates to a semiconductor device and a productionmethod therefor.

BACKGROUND ART

Atypical semiconductor device includes a die pad, a semiconductor chiparranged on the die pad, leads arranged on the periphery of the die pad,and wires connecting the semiconductor chip and the leads with oneanother.

When extending the wires, normal bonding of bonding (first bonding) thewires to the semiconductor chip in advance and subsequently bonding(second bonding) the same to the leads is performed in general. In acase where a difference in elevation between portions (pads) of thesemiconductor chip to which the wires are connected and the leads isrelatively large, however, it is difficult to excellently bond the wiresto the leads, and hence the so-called reverse bonding is performed. Inthe reverse bonding, the wires are first-bonded to the leads, andsecond-bonded to the semiconductor chip.

FIG. 34 is a schematic side elevational view of a semiconductor devicein which a wire is extended by reverse bonding.

The rear surface of a semiconductor chip 201 is bonded to the uppersurface of a die pad 202 in a state upwardly directing the front surfacewhich is an element forming surface. A pad 203 is arranged on aperipheral edge portion of the front surface of the semiconductor chip201. A wire 205 is extended between the pad 203 and the upper surface ofa lead 204 arranged on the periphery of the die pad 202.

In wire bonding, the lead 204 is pressed by a press plate 208, in orderto fix the die pad 202 and the lead 204 to a wire bonder. The pressplate 208 is brought into contact with a position at a small intervalfrom a bonded position of the wire 205 (ball portion 206) on the uppersurface of the lead 204 on a side opposite to the semiconductor chip201. Then, an FAB (Free Air Ball) is formed on a forward end portion ofthe wire 205 held in a capillary C (shown by broken lines) of the wirebonder, and the FAB is bonded to the upper surface of the lead 204.Thereafter the capillary C is moved toward the pad 203, and the wire 205is pressed against the pad 203, and further rent away. Thus, the wire205 is extended between the pad 203 and the lead 204. The wire 205extended by the reverse bonding has the ball portion 206 in the form ofa round rice cake on the lead 204, and has a stitch portion 207 wedgedin side elevational view on the pad 203.

A resin-sealed semiconductor device has a structure obtained by sealinga semiconductor chip with a resin package along with a lead frame. Thelead frame is formed by punching a metal thin plate, and includes anisland (die pad) and a plurality of leads arranged on the periphery ofthe island. The semiconductor chip is die-bonded to the upper surface ofthe island, and electrically connected with each lead by a bonding wireextended between the front surface thereof an each lead.

For the die bonding of the semiconductor chip to the island, a pastybonding agent such as solder paste is employed, for example. After thepasty bonding agent is applied to the upper surface of the island, thesemiconductor chip is arranged on the bonding agent, and a load isapplied to the semiconductor chip. Thus, the bonding agent is spreadbetween the semiconductor chip and the island, the semiconductor chipand the island are bonded to each other, and the die bonding of thesemiconductor chip to the island is achieved.

PRIOR ART Patent Document

Patent Document 1: Japanese Unexamined Patent Publication No.2004-207292

Patent Document 2: Japanese Unexamined Patent Publication No.2003-249616

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

Referring to FIG. 34, there is a possibility that the wire 205 comesinto contact with a corner portion of the semiconductor chip 201 if thecapillary C is linearly moved toward the pad 203 after the FAB is bondedto the lead 204. Therefore, the capillary C is temporarily moved to aside separating from the semiconductor chip 201, and thereafter movedtoward the pad 203, as shown by broken lines in FIG. 34. However, thereis a possibility that the capillary C and the press plate 208 come intocontact with each other at this time.

In order to prevent the contact between the capillary C and the pressplate 208, therefore, a sufficient clearance is provided between thebonded position of the FAB (the ball portion 206) and the press plate208. Even if the package size of the semiconductor device is reduced,therefore, the number of semiconductor devices (die pads 202 and leads204) obtainable from one lead frame cannot be increased.

In the normal bonding, there is no problem of the contact between thecapillary C and the press plate 208. If excellent bonding of the wire tothe lead can be obtained by the normal bonding, therefore, the number ofsemiconductor devices obtainable from one lead frame can be increased.

Ina case where a pasty bonding agent (solder) is employed, on the otherhand, the bonding agent may remarkably protrude from the space betweenthe semiconductor chip and the island to the periphery thereof when aload is applied to the semiconductor chip. This protrusion of thebonding agent may cause the following various inconveniences:

In a case where the island is small, for example, the protruding bondingagent overflows the island. Even if the island is formed sufficientlylarge as compared with the semiconductor chip, the bonding agent spreadsin a space of the island for bonding the wire in a case of extending thewire between the semiconductor chip and the island, whereby bonding isdisturbed. In a case where the semiconductor chip is thin, further, thebonding agent extends from a side portion to the front surface of thesemiconductor chip, regardless of the size of the island.

In order to solve the problems resulting from spreading of the bondingagent, a DAF (Die Attach Film) may conceivably be employed. The DAF is afilmy bonding agent. In a wafer state of the semiconductor chip, the DAFis pasted to the rear surface thereof. Then, the semiconductor chip andthe DAF are collectively diced, whereby such a semiconductor chip thatthe DAF is pasted to the rear surface thereof is obtained. Thesemiconductor chip is pressed against the upper portion of the island,whereby the island and the semiconductor chip are bonded to each other,and die bonding of the semiconductor chip to the island is achieved.

However, it is difficult to cut the wafer into a small size (550 μmsquare, for example) in the state where the DAF is pasted to the rearsurface of the wafer, and the DAF cannot be used for bonding asmall-sized semiconductor chip to an island.

One object of the present invention is to provide a semiconductordevice, in which a wire is excellently bonded to a lead by normalbonding.

Another object of the present invention is to provide a semiconductordevice and a production method therefor, capable of preventingoccurrence of various problems resulting from spreading of solder alsoin a small-sized semiconductor chip.

Solutions to Problems

A semiconductor device according to one aspect of the present inventionincludes a semiconductor chip, a lead arranged on a side portion of thesemiconductor chip, and a wire, whose one end and another end are bondedto the semiconductor chip and the lead respectively, having a ballportion and a stitch portion wedged in side elevational view on thesemiconductor chip and the lead respectively. In other words, the wireis extended between the semiconductor chip (a pad provided on the frontsurface of the semiconductor chip) and the lead arranged on the sideportion thereof by normal bonding in the semiconductor device accordingto the present invention. Therefore, the wire has the ball portion onthe semiconductor chip, and has the stitch portion wedged in sideelevational view on the lead.

In a semiconductor device according to one embodiment, an angle ofapproach of the wire to the lead, i.e., an angle formed by an endportion of the wire closer to the stitch portion and the lead is notless than 50°.

In this case, excellent bonding of the wire to the lead is achievedwithout causing cracking in the vicinity of the stitch portion of thewire if the length (length of a contact portion between the wire and thelead in a direction along the wire) of the stitch portion is not lessthan 33 μm.

Also in a case where an angle formed by the upper surface of the stitchportion and the upper surface of the lead is not less than 15°,excellent bonding of the wire to the lead is achieved without causingcracking in the vicinity of the stitch portion of the wire.

Also when the length of the stitch portion is not less than 33 μm andthe angle formed by the upper surface of the stitch portion and theupper surface of the lead is not less than 15°, excellent bonding of thewire to the lead is achieved without causing cracking in the vicinity ofthe stitch portion of the wire, as a matter of course.

In the semiconductor device according to one embodiment, the length ofthe wire is not more than 400 μm, and a difference in elevation betweena portion of the semiconductor chip to which the ball portion is bondedand a portion of the lead to which the stitch portion is bonded is notless than 200 μm.

If the length of the stitch portion is not less than 33 μm in this case,excellent bonding of the wire to the lead is achieved without causingcracking in the vicinity of the stitch portion of the wire.

Also in a case where the angle formed by the upper surface of the stitchportion and the upper surface of the lead is not less than 15°,excellent bonding of the wire to the lead is achieved without causingcracking in the vicinity of the stitch portion of the wire.

Also when the length of the stitch portion is not less than 33 μm andthe angle formed by the upper surface of the stitch portion and theupper surface of the lead is not less than 15°, excellent bonding of thewire to the lead is achieved without causing cracking in the vicinity ofthe stitch portion of the wire, as a matter of course.

A production method for a semiconductor device according to one aspectof the present invention includes a support body arranging step ofarranging a support body made of solid solder on an island, a chipsupporting step of placing a semiconductor chip on the support body formaking the support body support the semiconductor chip after the supportbody arranging step, and a bonding step of bonding the island and thesemiconductor chip to each other by melting the support body by a heattreatment after the chip supporting step.

According to the production method for a semiconductor device, thesupport body made of the solid solder is first arranged on the island.Then, the semiconductor chip is placed on the support body. Thus, thesemiconductor chip is supported on the support body. Thereafter thesupport body (solder) is melted by the heat treatment, and the islandand the semiconductor chip are bonded to each other.

In the heat treatment, the melted solder spreads between thesemiconductor chip and the island, due to surface tension andwettability possessed by the solder. Therefore, no load may be appliedto the semiconductor chip in the bonding of the semiconductor chip tothe island, dissimilarly to a method employing a pasty bonding agent forbonding the semiconductor chip and the island to each other. No load isapplied to the semiconductor chip, whereby spreading of the solderresulting from the load can be prevented. Further, the semiconductorchip and the island can be bonded to each other without causingremarkable protrusion of the solder from a space between thesemiconductor chip and the island by varying the magnitude, the shapeand the number of the support body in response to the size of thesemiconductor chip, regardless of the size of the semiconductor chip.Also in a small-sized semiconductor chip, therefore, die bonding to theisland can be achieved without causing various problems resulting fromspreading of the solder.

Preferably, the production method further includes a step of forming athin film made of silver on the island in advance of the support bodyarranging step, and the support body is arranged on the thin film in thesupport body arranging step. Wettability of the solder with respect tothe silver is so high that the melted support body (solder) spreads inthe range where the thin film made of silver is formed when the supportbody is melted in the heat treatment. Therefore, spreading of the soldercan be controlled and occurrence of various problems resulting fromspreading of the solder can be reliably prevented by forming the thinfilm made of silver.

The island may be provided with a recess portion dug down from the uppersurface thereof, and the support body may be arranged in the recessportion in the support body arranging step. Thus, the support body canbe stably arranged on the island.

The production method may further include a flux applying step ofapplying a flux to the support body after the support body arrangingstep, in advance of the chip supporting step. Thus, the front surface ofthe support body can be prevented from oxidation, and the wettability ofthe support body (solder) in the heat treatment can be improved.Further, portions of the semiconductor chip and the island in contactwith the flux are washed due to action of the flux, whereby adhesivenessbetween the semiconductor chip and the island can be further improved.

In the case where the flux applying step is included in the productionmethod for a semiconductor device, the flux adheres to a solder bondingagent bonding the semiconductor chip and the island to each other in asemiconductor device produced by the production method. In other words,the semiconductor device produced by the production method including theflux applying step includes a semiconductor chip, an island to whoseupper surface the semiconductor chip is bonded, and a solder bondingagent made of solder and interposed between the semiconductor chip andthe island for bonding the semiconductor chip and the island to eachother, while a flux adheres to the solder bonding agent.

The foregoing and other objects, features and effects of the presentinvention will become more apparent from the following detaileddescription of the embodiments with reference to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a plan view of a semiconductor device according to a firstembodiment of the present invention.

FIG. 1B is a diagram applying a modification to FIG. 1A.

FIG. 2A is a schematic plan view showing a state of omitting asemiconductor chip, wires and a solder bonding agent from thesemiconductor device shown in FIG. 1A.

FIG. 2B is a diagram applying a modification to FIG. 2A.

FIG. 3 is a schematic sectional view at a time of cutting thesemiconductor device shown in FIG. 1A along a cutting plane lineIII-III.

FIG. 4 is a schematic sectional view of the semiconductor device takenalong a cutting plane line IV-IV shown in FIG. 1A.

FIG. 5A is a schematic sectional view showing a production step for thesemiconductor device shown in FIG. 1A.

FIG. 5B is a schematic sectional view showing a step subsequent to FIG.5A.

FIG. 5C is a schematic sectional view showing a step subsequent to FIG.5B.

FIG. 5D is a schematic sectional view showing a step subsequent to FIG.5C.

FIG. 5E is a schematic sectional view showing a step subsequent to FIG.5D.

FIG. 6 is a perspective view showing another structure of an island andsupport bodies.

FIG. 7 is a perspective view showing still another structure of theisland and the support bodies.

FIG. 8 is an illustrative sectional view showing a forward end shape ofa capillary employed in Example 1.

FIG. 9 is a SEM image (number one) in the vicinity of a stitch portionobtained in Example 1.

FIG. 10 is a SEM image (number two) in the vicinity of the stitchportion obtained in Example 1.

FIG. 11 is a SEM image (number three) in the vicinity of the stitchportion obtained in Example 1.

FIG. 12 is an illustrative sectional view showing a forward end shape ofa capillary employed in Example 2.

FIG. 13 is a SEM image (number one) in the vicinity of a stitch portionobtained in Example 2.

FIG. 14 is a SEM image (number two) in the vicinity of the stitchportion obtained in Example 2.

FIG. 15 is an illustrative sectional view showing a forward end shape ofa capillary employed in comparative example.

FIG. 16 is a SEM image in the vicinity of a stitch portion obtained incomparative example.

FIG. 17 is a plan view of a semiconductor device according to a secondembodiment of the present invention.

FIG. 18 is a schematic sectional view of the semiconductor device takenalong a cutting plane line A-A shown in FIG. 17.

FIG. 19 is an illustrative sectional view showing a forward end shape ofa capillary employed in Example 1.

FIG. 20 is a SEMimage(numberone) in of a stitch portion obtained inExample 1.

FIG. 21 is a SEMimage(numbertwo) in of the stitch portion obtained inExample 1.

FIG. 22 is a SEM image (number three) in the vicinity of the stitchportion obtained in Example 1.

FIG. 23 is an illustrative sectional view showing a forward end shape ofa capillary employed in Example 2.

FIG. 24 is a SEM image (number one) in of a stitch portion obtained inExample 2.

FIG. 25 is a SEM image (number two) in of the stitch portion obtained inExample 2.

FIG. 26 is an illustrative sectional view showing a forward end shape ofa capillary employed in comparative example.

FIG. 27 is a SEM image in the vicinity of a stitch portion obtained incomparative example.

FIG. 28 is a schematic plan view of a semiconductor device according toa third embodiment of the present invention.

FIG. 29 is a schematic plan view showing a state of omitting asemiconductor chip, wires and a solder bonding agent from thesemiconductor device shown in FIG. 28.

FIG. 30 is a schematic sectional view at a time of cutting thesemiconductor device shown in FIG. 28 along a cutting plane line B-B.

FIG. 31A is a schematic sectional view showing a production step for thesemiconductor device shown in FIG. 28.

FIG. 31B is a schematic sectional view showing a step subsequent to FIG.31A.

FIG. 31C is a schematic sectional view showing a step subsequent to FIG.31B.

FIG. 31D is a schematic sectional view showing a step subsequent to FIG.31C.

FIG. 31E is a schematic sectional view showing a step subsequent to FIG.31D.

FIG. 32 is a perspective view showing another structure of an island andsupport bodies.

FIG. 33 is a perspective view showing still another structure of theisland and the support bodies.

FIG. 34 is a schematic side elevation view of a semiconductor device inwhich a wire is extended by reverse bonding.

MODES FOR CARRYING OUT THE INVENTION First Embodiment

FIG. 1A is a plan view of a semiconductor device according to a firstembodiment of the present invention. FIG. 1B is a diagram applying amodification to FIG. 1A. Referring to FIGS. 1A and 1B, respectivemembers sealed in a resin package are perspectively shown by solidlines. FIG. 2A is a schematic plan view showing a state of omitting asemiconductor chip, wires and a solder bonding agent from thesemiconductor device shown in FIG. 1A. FIG. 2B is a diagram applying amodification to FIG. 2A. FIG. 3 is a schematic sectional view at a timeof cutting the semiconductor device shown in FIG. 1A along a cuttingplane line III-III. FIG. 4 is a schematic sectional view of thesemiconductor device taken along a cutting plane line IV-IV shown inFIG. 1A. Referring to FIG. 4, illustration of the resin package isomitted.

A semiconductor device 1 has a structure obtained by bonding asemiconductor chip 3 to a lead frame 2 and sealing the same with a resinpackage 4. The outer shape of the semiconductor device 1 (the resinpackage 4) is in the form of a flat rectangular parallelepiped(hexahedron square in plan view in this embodiment).

The lead frame 2 includes a die pad (island) 5 arranged on a centralportion of the semiconductor device 1 in plan view and four leads 6arranged on the periphery of the die pad 5, as shown in FIG. 1A. Thelead frame 2 is formed by punching a metal thin plate (copper thinplate, for example).

The die pad 5 integrally includes a central portion 7 and hangingportions 8. The central portion 7 is provided in the form of aquadrangle in plan view, whose center overlaps with the center of theresin package 4 in plan view, having four sides inclined by 45° withrespect to the respective sides of the resin package 4. The hangingportions 8 are provided in the form of quadrangles in plan viewextending from respective corner portions of the central portion 7toward side surfaces of the resin package 4 to which the corner portionsare opposed. The lower surface of the central portion 7 is exposed onthe rear surface of the resin package 4.

The central portion 7 is provided with two (a pair of) trench-shapedrecess portions 107 dug down from the upper surface thereof (see FIG.2A). The respective recess portions 107 are provided in the form ofsemicircles in section, and extend parallelly to two opposed sides ofthe central portion 7 respectively. On the upper surface of the centralportion 7, a thin film 108 made of silver (Ag) is formed in a regionincluding portions where the recess portions 107 are formed in plan view(see FIG. 2A). More specifically, the thin film 108 is formed in a sizegenerally identical to that of a portion of the island 5 opposed to thesemiconductor chip 3 in a state where the semiconductor chip 3 is bondedonto the island 5, as shown in FIG. 3.

The leads 6 are arranged one by one on portions opposed to therespective sides of the central portion 7 of the die pad 5 in plan view.The respective leads 6 are provided in the form of trapezoids in planview. More specifically, the respective leads 6 have sides 9 parallel toopposed sides of the die pad 5, sides 10 extending on the side surfacesof the resin package 4, sides 11 orthogonal to the sides 10 andextending parallelly to the side surfaces of the resin package 4, andsides 12 and 13 connecting the sides 9 and the sides 10 and 11 with oneanother respectively. The lower surfaces of the respective leads 6 areexposed on the rear surface of the resin package 4, and function asexternal terminals for connection with a wiring board (not shown).Further, the side surfaces of the respective leads 6 having the sides 10are exposed on the side surfaces of the resin package 4. The respectiveleads 6 may be provided in the form of triangles in plan view, as shownin FIGS. 1B and 2B.

As shown in FIG. 3, the rear surface of the semiconductor chip 3 isbonded (die-bonded) to the die pad 5 through a conductive solder bondingagent 109, in a state upwardly directing the front surface (deviceforming surface) which is an element forming surface. A metal film 115for improving adhesiveness between the solder bonding agent 109 and thesemiconductor chip 3 is applied to the rear surface of the semiconductorchip 3. The metal film 115 is a multilayer film formed by stacking Au(gold), Ni (nickel), Ag and Au in this order from the side of thesemiconductor chip 3, for example. A solidified flux 110 solidified in aresinous manner adheres to peripheral edge portions of the solderbonding agent 109, i.e., to side portions of bonded portions of thesemiconductor chip 3 and the island 5.

The thickness of the semiconductor chip 3 is not less than 200 μm (230μm in this embodiment), and there is a difference in elevationresponsive to the thickness of the semiconductor chip 3 between thefront surface of the semiconductor chip 3 (in detail, the front surfacesof pads 14 described later) and the upper surfaces of the leads 6.

As shown in FIG. 1A, five pads 14 electrically connected with wires (notshown) formed on the semiconductor chip 3 are formed on the frontsurface of the semiconductor chip 3. Four pads 14 (hereinafter referredto as “pads 14 on the corner portions”) are arranged on the respectivecorner portions of the semiconductor chip 3. The remaining one pad 14(hereinafter referred to as “remaining pad 14”) is arranged adjacentlyto the pad 14 on one corner portion.

First ends of wires (bonding wires) 15 are bonded to the respective pads14. Second ends of the respective wires 15 are bonded to the uppersurfaces of the leads 6. More specifically, the second ends of the wires15 whose first ends are bonded to the four pads 14 on the cornerportions are bonded to the upper surfaces of the leads 6 different fromone another respectively. The second end of the wire 15 whose first endis bonded to the remaining pad 14 is bonded to the lead 6 closest to theremaining pad 14. Thus, the semiconductor chip 3 is electricallyconnected with the leads 6 through the wires 15. The length of the wires15 is not more than 400 μm (300 to 400 μm in this embodiment).

The cutting plane line III-III extends parallelly to both of the wire 15extending from the pad 14 on the corner portion of the lower end of thesemiconductor chip 3 in FIG. 1A and the wire 15 extending from theaforementioned remaining pad 14. While the cutting plane line III-IIIoverlaps with these wires 15 in practice, the same is illustrated on aposition slightly deviating from these wires 15, in order to renderthese wires 15 easily observable. The cutting plane line IV-IV extendsparallelly to the wire 15 extending from the pad 14 on the cornerportion of the upper end of the semiconductor chip 3 in FIG. 1A. Whilethe cutting plane line IV-IV overlaps with this wire 15 in practice, thesame is illustrated on a position slightly deviating from this wire 15,in order to render this wire 15 easily observable.

Each wire 15 is formed by normal bonding. In other words, current isapplied to a forward end portion of the wire 15 held by a capillary C(see FIG. 34) of a wire bonder in the formation (in wire bonding) of thewire 15, whereby an FAB (Free Air Ball) is formed on the forward endportion. Then, the FAB is pressed against the pad 14, by movement of thecapillary C. The FAB is pressed by the capillary C, whereby the FAB isdeformed, a ball portion 16 in the form of a round rice cake is formedon the pad 14 as shown in FIG. 4, and bonding (first bonding) of thefirst end of the wire 15 to the pad 14 is achieved. Thereafter thecapillary C is upwardly separated from the pad 14 up to a prescribedheight. Then, the capillary C is moved toward the upper surface of thelead 6 at an angle of inclination greater than 50° with respect to theupper surface of the lead 6, and the wire 15 is pressed against theupper surface of the lead 6, and further rent away. Thus, the second endof the wire 15 is deformed, a stitch portion 17 wedged in sideelevational view is formed on the lead 6, and bonding (second bonding)of the second end of the wire 15 to the lead 6 is achieved. Therefore,the wire 15 has the ball portion 16 on the pad 14, and has the stitchportion 17 on the lead 6.

At the time of the second bonding, the capillary C is moved at the angleof inclination greater than 50° with respect to the upper surface of thelead 6, whereby an angle of approach of the wire 15 to the upper surfaceof the lead 6, i.e., an angle β formed by an end portion of the wire 15closer to the stitch portion 17 and the upper surface of the lead 6 isnot less than 50°.

In the semiconductor device 1, the length (length of a contact portionbetween the wire 15 and the lead 6 in a direction along the wire 15) Lof the stitch portion 17 is not less than 33 μm. Further, an angle αformed by the upper surface of the stitch portion 17 and the uppersurface of the lead 6 is not less than 15°.

Thus, excellent bonding of the wire 15 to the lead 6 is achieved withoutcausing cracking in the vicinity of the stitch portion 17 of the wire15, even if the angle of approach of the wire 15 to the upper surface ofthe lead 6 is not less than 50°. Further, excellent bonding of the wire15 to the lead 6 is achieved without causing cracking in the vicinity ofthe stitch portion 17 of the wire 15, even if the length of the wire 15is not more than 400 μm and a difference in elevation between the frontsurface of the semiconductor chip 3 and the upper surface of the lead 6is not less than 200 μm.

FIGS. 5A to 5E are schematic sectional views for illustrating productionsteps for the semiconductor device shown in FIGS. 1A and 1B in order.Referring to FIGS. 5A to 5E, illustration of the leads 6 and the bondingwires 15 etc. is omitted.

First, the lead frame 2 including the island 5 provided with the recessportions 107 is prepared. The lead frame 2 is formed by pressing andpunching a copper thin plate, for example. Then, the thin film 108 madeof silver is formed on the island 5 by plating or sputtering, as shownin FIG. 5A. At this time, the thin film 108 is formed also on the innersurfaces of the recess portions 107.

Then, support bodies 113 made of solid solder are arranged on the thinfilm 108 in the recess portions 107, as shown in FIG. 5B. The supportbodies 113 are formed in shapes generally identical to those of therecess portions 107 in plan view, and have circular sections.

Thereafter a flux 114 is applied to the support bodies 113, as shown inFIG. 5C. The flux 114 may be collectively applied to the whole area ofthe upper surface of the island 5, or may be selectively applied toportions of the support bodies 113 exposed from the recess portions 107.

Then, the semiconductor chip 3 is placed on the support bodies 113, asshown in FIG. 5D. Thus, the semiconductor chip 3 is supported on thesupport bodies 113.

In a case where the support bodies 113 are lead solder, for example, aheat treatment for 30 sec. is performed under a temperature condition of340° C., whereby the support bodies 113 are melted, and the supportbodies 113 spread in the range where the thin film 108 is formed due tosurface tension and wettability thereof, as shown in FIG. 5E. Thus, aclearance between opposed portions of the semiconductor chip 3 and theisland 5 is filled up with the melted support bodies 113 (the solderbonding agent 109), and bonding between the semiconductor chip 3 and theisland 5 is achieved. At this time, the flux 114 aggregates and issolidified on the side portions of the semiconductor chip 3 whilewashing the lower surface of the semiconductor chip 3 (the front surfaceof the metal film 115) and the upper surface of the island 5, to becomethe solidified flux 110.

Thereafter the bonding wires 15 are extended between the semiconductorchip 3 and the leads 6 and the resin package 4 is so formed that onlythe rear surfaces of the island 5 and the leads 6 are exposed, wherebythe semiconductor device 1 shown in FIGS. 1A to 3 is obtained.

As hereinabove described, the melted solder spreads between thesemiconductor chip 3 and the island 5 in the heat treatment, due to thesurface tension and the wettability possessed by the solder. Therefore,no load may be applied to the semiconductor chip 3 in the bonding of thesemiconductor chip 3 to the island 5, dissimilarly to a method employinga pasty adhesive for the bonding of the semiconductor chip 3 and theisland 5. No load is applied to the semiconductor chip 3, wherebyspreading of the solder by the load can be prevented. Further, thesemiconductor chip 3 and the island 5 can be bonded to each otherwithout causing remarkable protrusion of the solder from a space betweenthe semiconductor chip 3 and the island 5 by varying the magnitude, theshape and the number of the support bodies 113 in response to the sizeof the semiconductor chip 3, regardless of the size of the semiconductorchip 3. Even in a small-sized semiconductor chip 3, therefore, diebonding to the island 5 can be achieved without causing various problemsresulting from spreading of the solder.

The support bodies 113 are arranged on the thin film 108 made of silver.The wettability of the solder with respect to the silver is so highthat, when the support bodies 113 are melted in the heat treatment, themelted support bodies 113 spread in the range where the thin film 108made of silver is formed. Therefore, spreading of the support bodies 113can be controlled and occurrence of various problems resulting fromspreading of the solder can be reliably prevented by forming the thinfilm 108 made of silver.

Further, the island 5 is provided with the recess portions 107 dug downfrom the upper surface thereof, and the support bodies 113 are arrangedin the recess portions 107. Thus, the support bodies 113 can be stablyarranged on the island 5.

In addition, the flux 114 is applied to the support bodies 113, wherebythe front surfaces of the support bodies 113 can be prevented fromoxidation, and the wettability of the support bodies 113 (solder) in theheat treatment can be improved. Further, portions of the semiconductorchip 3 and the island 5 in contact with the flux 114 are washed due toaction of the flux 114, whereby adhesiveness between the semiconductorchip 3 and the island 5 can be further improved.

FIG. 6 is a perspective view showing another structure of the island andthe support bodies.

An island 121 shown in FIG. 6 can be employed in place of the island 5shown in FIG. 1A.

The island 121 is quadrangular in plan view. The island 121 is providedwith three recess portions 122 semispherically dug down from the uppersurface thereof. The respective recess portions 122 are arranged atintervals from one another so that the inside of lines connecting thesame with one another is in the form of a triangle.

On the upper surface of the island 122, a thin film 123 made of silveris formed in a region including portions where the recess portions 122are formed in plan view. More specifically, the thin film 123 is formedin a size generally identical to that of a portion of the island 121opposed to the semiconductor chip 3 in a state where the semiconductorchip 3 (see FIG. 1A) is bonded onto the island 121. The thin film 123 isformed also on the inner surfaces of the respective recess portions 122.

Support bodies 124 are arranged on the thin film 123 in the recessportions 122. The support bodies 124 are provided in the form of sphereshaving a diameter generally identical to that of the recess portions122.

When the semiconductor chip 3 is placed on the three support bodies 124and a heat treatment is performed, the support bodies 124 are melted,and the support bodies 124 (solder) spread in the range where the thinfilm 123 is formed due to surface tension and wettability thereof. Thus,a clearance between opposed portions of the semiconductor chip 3 and theisland 121 is filled up with the melted support bodies 124, and bondingbetween the semiconductor chip 3 and the island 121 is achieved.

FIG. 7 is a perspective view showing still another structure of theisland and the support bodies.

An island 131 shown in FIG. 7 can be employed in place of the island 5shown in FIG. 1A.

The island 131 is quadrangular in plan view. A thin film 132 made ofsilver is formed on the upper surface of the island 131. Morespecifically, the thin film 132 is formed in a size generally identicalto that of a portion of the island 131 opposed to the semiconductor chip3 in a state where the semiconductor chip 3 (see FIG. 1A) is bonded ontothe island 131.

Two support bodies 133 are arranged on the thin film 132. The supportbodies 133 are provided in the form of slender plates (in the form ofribbons) in plan view, and parallelly extend at an interval from eachother.

When the semiconductor chip 3 is placed on the two support bodies 133and a heat treatment is performed, the support bodies 133 are melted,and the support bodies 133 (solder) spread in the range where the thinfilm 132 is formed due to surface tension and wettability thereof. Thus,a clearance between opposed portions of the semiconductor chip 3 and theisland 131 is filled up with the melted support bodies 133, and bondingbetween the semiconductor chip 3 and the island 131 is achieved.

While a QFN (Quad Flat Non-leaded Package) is applied to thesemiconductor device 1 according to this embodiment, this embodiment canalso be applied to a semiconductor device to which another type ofnon-leaded package such as an SON (Small Outlined Non-leaded Package) isapplied.

Further, this embodiment is not restricted to the so-called singulationtype package so formed that end surfaces of leads and side surfaces ofsealing resin are flush with one another, but can also be applied to asemiconductor device to which a lead-cut type non-leaded package inwhich leads protrude from side surfaces of sealing resin is applied.

In addition, this embodiment is not restricted to the non-leadedpackage, but can also be applied to a semiconductor device to which apackage, such as a QFP (Quad Flat Package), having outer leads resultingfrom protrusion of leads from sealing resin is applied.

While the so-called surface-mounted semiconductor device in which rearsurfaces of leads and an island are exposed from a rear surface of aresin package has been illustrated as the semiconductor device 1, thisembodiment may be applied to a resin-sealed semiconductor device inwhich leads extend toward side portions of a resin package. In otherwords, this embodiment can be widely applied to a semiconductor devicehaving a structure obtained by bonding a semiconductor chip onto anisland.

While the present invention is now described with reference to Examplesand comparative example, the present invention is not restricted by thefollowing Examples.

1. Example 1

A gold wire having a wire diameter of 25 μm was extended between a padand a lead on a front surface of a semiconductor chip by normal bonding,by employing a capillary shown in FIG. 8. A T dimension of the capillaryshown in FIG. 8 is 130 μm, and a CD dimension is 50 μm. An angle ofapproach of the wire to the upper surface of the lead is 50°.

Then, a portion (stitch portion) of the gold wire bonded to the lead wasobserved with a scanning electron microscope (SEM: Scanning ElectronMicroscope). FIGS. 9 to 11 show SEM images at that time.

As shown in FIGS. 9 to 11, it has been confirmed that a stitch portionhaving a length of 33 μm was formed and no defects such as cracks wereformed in the vicinity of the stitch portion in Example 1.

2. Example 2

A gold wire having a wire diameter of 25 μm was extended between a padand a lead on a front surface of a semiconductor chip by normal bonding,by employing a capillary shown in FIG. 12. An FA (Face Angle) of thecapillary shown in FIG. 12 is 15°. An angle of approach of the wire tothe upper surface of the lead is 50°.

Then, a portion (stitch portion) of the gold wire bonded to the lead wasobserved with a scanning electron microscope. FIGS. 13 and 14 show SEMimages at that time.

As shown in FIGS. 13 and 14, it has been confirmed that such a stitchportion that an angle α formed by the upper surface thereof and theupper surface of the lead is 15° was formed and no defects such ascracks were formed in the vicinity of the stitch portion in Example 2.

3. Comparative Example

A gold wire having a wire diameter of 25 μm was extended between a padand a lead on a front surface of a semiconductor chip by normal bonding,by employing a capillary shown in FIG. 15. An FA (Face Angle) of thecapillary shown in FIG. 15 is 11°. An angle of approach of the wire tothe upper surface of the lead is 50°.

Then, a portion (stitch portion) of the gold wire bonded to the lead wasobserved with a scanning electron microscope. FIG. 16 shows a SEM imageat that time.

As shown in FIG. 16, it has been confirmed that cracks were formed inthe vicinity of the stitch portion in comparative example.

Second Embodiment

FIG. 17 is a plan view of a semiconductor device according to a secondembodiment of the present invention. Referring to FIG. 17, respectivemembers sealed in a resin package are perspectively shown by solidlines. FIG. 18 is a schematic sectional view of the semiconductor devicetaken along a cutting plane line A-A shown in FIG. 17. Referring to FIG.18, illustration of the resin package is omitted. In the description ofthis embodiment, it is assumed that portions corresponding to therespective portions in the first embodiment are denoted by the samereference numerals.

A semiconductor device 1 has a structure obtained by bonding asemiconductor chip 3 to a lead frame 2 and sealing the same with a resinpackage 4. The outer shape of the semiconductor device 1 (the resinpackage 4) is in the form of a flat rectangular parallelepiped(hexahedron square in plan view in this embodiment).

The lead frame 2 includes a die pad 5 arranged on a central portion ofthe semiconductor device 1 in plan view and four leads 6 arranged on theperiphery of the die pad 5, as shown in FIG. 17. The lead frame 2 isformed by punching a metal thin plate (copper thin plate, for example).

The die pad 5 integrally includes a central portion 7 and hangingportions 8. The central portion 7 is provided in the form of aquadrangle in plan view, whose center overlaps with the center of theresin package 4 in plan view, having four sides inclined by 45° withrespect to the respective sides of the resin package 4. The hangingportions 8 are provided in the form of quadrangles in plan viewextending from respective corner portions of the central portion 7toward side surfaces of the resin package 4 to which the corner portionsare opposed. The lower surface of the central portion 7 is exposed onthe rear surface of the resin package 4.

The leads 6 are arranged one by one on portions opposed to therespective sides of the central portion 7 of the die pad 5. Therespective leads 6 are provided in the form of trapezoids in plan view.More specifically, the respective leads 6 have sides 9 parallel toopposed sides of the die pad 5, sides 10 extending on the side surfacesof the resin package 4, sides 11 orthogonal to the sides 10 andextending parallelly to the side surfaces of the resin package 4, andsides 12 and 13 connecting the sides 9 and the sides 10 and 11 with oneanother respectively. The lower surfaces of the respective leads 6 areexposed on the rear surface of the resin package 4, and function asexternal terminals for connection with a wiring board (not shown).Further, the side surfaces of the respective leads 6 having the sides 10are exposed on the side surfaces of the resin package 4.

The rear surface of the semiconductor chip 3 is bonded (die-bonded) tothe die pad 5 through a conductive bonding agent (not shown) in a stateupwardly directing the front surface which is an element formingsurface. The thickness of the semiconductor chip 3 is not less than 200μm (230 μm in this embodiment), and there is a difference in elevationresponsive to the thickness of the semiconductor chip 3 between thefront surface of the semiconductor chip 3 (in detail, the front surfacesof pads 14 described later) and the upper surfaces of the leads 6.

Five pads 14 electrically connected with wires (not shown) formed on thesemiconductor chip 3 are formed on the front surface of thesemiconductor chip 3. Four pads 14 (hereinafter referred to as “pads 14on the corner portions”) are arranged on the respective corner portionsof the semiconductor chip 3. The remaining one pad 14 (hereinafterreferred to as “remaining pad 14”) is arranged adjacently to the pad 14on one corner portion.

First ends of wires 15 are bonded to the respective pads 14. Second endsof the respective wires 15 are bonded to the upper surfaces of the leads6. More specifically, the second ends of the wires 15 whose first endsare bonded to the four pads 14 on the corner portions are bonded to theupper surfaces of the leads 6 different from one another respectively.The second end of the wire 15 whose first end is bonded to the remainingpad 14 is bonded to the lead 6 closest to the remaining pad 14. Thus,the semiconductor chip 3 is electrically connected with the leads 6through the wires 15. The length of the wires 15 is not more than 400 μm(300 to 400 μm in this embodiment).

The cutting plane line A-A extends parallelly to the wire 15 extendingfrom the pad 14 on the corner portion of the upper end of thesemiconductor chip 3 in FIG. 17. While the cutting plane line A-Aoverlaps with this wire 15 in practice, the same is illustrated on aposition slightly deviating from this wire 15, in order to render thiswire 15 easily observable.

Each wire 15 is formed by normal bonding. In other words, current isapplied to a forward end portion of the wire 15 held by a capillary C(see FIG. 34) of a wire bonder in the formation (in wire bonding) of thewire 15, whereby an FAB (Free Air Ball) is formed on the forward endportion. Then, the FAB is pressed against the pad 14, by movement of thecapillary C. The FAB is pressed by the capillary C, whereby the FAB isdeformed, a ball portion 16 in the form of a round rice cake is formedon the pad 14 as shown in FIG. 18, and bonding (first bonding) of thefirst end of the wire 15 to the pad 14 is achieved. Thereafter thecapillary C is upwardly separated from the pad 14 up to a prescribedheight. Then, the capillary C is moved toward the upper surface of thelead 6 at an angle of inclination greater than 50° with respect to theupper surface of the lead 6, and the wire 15 is pressed against theupper surface of the lead 6, and further rent away. Thus, the second endof the wire 15 is deformed, a stitch portion 17 wedged in sideelevational view is formed on the lead 6, and bonding (second bonding)of the second end of the wire 15 to the lead 6 is achieved. Therefore,the wire 15 has the ball portion 16 on the pad 14, and has the stitchportion 17 on the lead 6.

At the time of the second bonding, the capillary C is moved at the angleof inclination greater than 50° with respect to the upper surface of thelead 6, whereby an angle of approach of the wire 15 to the upper surfaceof the lead 6, i.e., an angle β formed by an end portion of the wire 15closer to the stitch portion 17 and the upper surface of the lead 6 isnot less than 50°.

In the semiconductor device 1, the length (length of a contact portionbetween the wire 15 and the lead 6 in a direction along the wire 15) Lof the stitch portion 17 is not less than 33 μm. Further, an angle αformed by the upper surface of the stitch portion 17 and the uppersurface of the lead 6 is not less than 15°.

Thus, excellent bonding of the wire 15 to the lead 6 is achieved withoutcausing cracking in the vicinity of the stitch portion 17 of the wire15, even if the angle of approach of the wire 15 to the upper surface ofthe lead 6 is not less than 50°. Further, excellent bonding of the wire15 to the lead 6 is achieved without causing cracking in the vicinity ofthe stitch portion 17 of the wire 15, even if the length of the wire 15is not more than 400 μm and a difference in elevation between the frontsurface of the semiconductor chip 3 and the upper surface of the lead 6is not less than 200 μm.

While a QFN (Quad Flat Non-leaded Package) is applied to thesemiconductor device 1 according to this embodiment, this embodiment canalso be applied to a semiconductor device to which another type ofnon-leaded package such as an SON (Small Outlined Non-leaded Package) isapplied.

Further, this embodiment is not restricted to the so-called singulationtype package so formed that end surfaces of leads and side surfaces ofsealing resin are flush with one another, but can also be applied to asemiconductor device to which a lead-cut type non-leaded package inwhich leads protrude from side surfaces of sealing resin is applied.

In addition, this embodiment is not restricted to the non-leadedpackage, but can also be applied to a semiconductor device to which apackage, such as a QFP (Quad Flat Package), having outer leads resultingfrom protrusion of leads from sealing resin is applied.

While the present invention is now described with reference to Examplesand comparative example, the present invention is not restricted by thefollowing Examples.

1. Example 1

A gold wire having a wire diameter of 25 μm was extended between a padand a lead on a front surface of a semiconductor chip by normal bonding,by employing a capillary shown in FIG. 19. A T dimension of thecapillary shown in FIG. 19 is 130 μm, and a CD dimension is 50 μm. Anangle of approach of the wire to the upper surface of the lead is 50°.

Then, a portion (stitch portion) of the gold wire bonded to the lead wasobserved with a scanning electron microscope (SEM: Scanning ElectronMicroscope). FIGS. 20 to 22 show SEM images at that time.

As shown in FIGS. 20 to 22, it has been confirmed that a stitch portionhaving a length of 33 μm was formed and no defects such as cracks wereformed in the vicinity of the stitch portion in Example 1.

2. Example 2

A gold wire having a wire diameter of 25 μm was extended between a padand a lead on a front surface of a semiconductor chip by normal bonding,by employing a capillary shown in FIG. 23. An FA (Face Angle) of thecapillary shown in FIG. 23 is 15°. An angle of approach of the wire tothe upper surface of the lead is 50°.

Then, a portion (stitch portion) of the gold wire bonded to the lead wasobserved with a scanning electron microscope. FIGS. 24 and 25 show SEMimages at that time.

As shown in FIGS. 24 and 25, it has been confirmed that such a stitchportion that an angle α formed by the upper surface thereof and theupper surface of the lead is 15° was formed and no defects such ascracks were formed in the vicinity of the stitch portion in Example 2.

3. Comparative Example

A gold wire having a wire diameter of 25 μm was extended between a padand a lead on a front surface of a semiconductor chip by normal bonding,by employing a capillary shown in FIG. 26. An FA (Face Angle) of thecapillary shown in FIG. 26 is 11°. An angle of approach of the wire tothe upper surface of the lead is 50°.

Then, a portion (stitch portion) of the gold wire bonded to the lead wasobserved with a scanning electron microscope. FIG. 27 shows a SEM imageat that time.

As shown in FIG. 27, it has been confirmed that cracks were formed inthe vicinity of the stitch portion in comparative example.

Third Embodiment

FIG. 28 is a schematic plan view of a semiconductor device according toa third embodiment of the present invention. FIG. 29 is a schematic planview showing a state of omitting a semiconductor chip, wires and asolder bonding agent from the semiconductor device shown in FIG. 28.FIG. 30 is a schematic sectional view at a time of cutting thesemiconductor device shown in FIG. 28 along a cutting plane line B-B. Inthe description of this embodiment, it is assumed that portionscorresponding to the respective portions in the first and secondembodiments are denoted by the same reference numerals.

A semiconductor device 1 has a structure obtained by sealing asemiconductor chip 3 with a resin package 4 along with a lead frame 2.The outer shape of the semiconductor device 1 is in the form of a flatrectangular parallelepiped (hexahedron square in plan view in thisembodiment).

The lead frame 2 is made of a metallic material such as copper (Cu), andincludes an island 5 and four leads 6 arranged on the periphery of theisland 5.

The island 5 is quadrangular in plan view (square in plan view in thisembodiment). The lower surface of the island 5 is exposed on the rearsurface of the resin package 4. The island 5 is provided with two (apair of) trench-shaped recess portions 107 dug down from the uppersurface thereof (see FIG. 29). The respective recess portions 107 areprovided in the form of semicircles in section, and extend parallelly totwo opposed sides of the island 5 respectively. On the upper surface ofthe island 5, a thin film 108 made of silver (Ag) is formed in a regionincluding portions where the recess portions 107 are formed in plan view(see FIG. 29). More specifically, the thin film 108 is formed in a sizegenerally identical to that of a portion of the island 5 opposed to thesemiconductor chip 3 in a state where the semiconductor chip 3 is bondedonto the island 5, as shown in FIG. 28.

The leads 6 are arranged on portions opposed to four sides of the island5 respectively in plan view. The respective leads 6 are provided in theform of triangles in plan view. The lower surfaces of the respectiveleads 6 are exposed on the rear surface of the resin package 4, andfunction as external terminals for connection with a wiring board (notshown).

As shown in FIG. 30, the rear surface of the semiconductor chip 3 isbonded (die-bonded) to the island 5 through a conductive solder bondingagent 109 in a state upwardly directing the front surface (deviceforming surface) of a side provided with functional elements. A metalfilm 115 for improving adhesiveness between the solder bonding agent 109and the semiconductor chip 3 is applied to the rear surface of thesemiconductor chip 3. The metal film 115 is a multilayer film formed bystacking Au (gold), Ni (nickel), Ag and Au in this order from the sideof the semiconductor chip 3, for example.

A solidified flux 110 solidified in a resinous manner adheres toperipheral edge portions of the solder bonding agent 109, i.e., to sideportions of bonded portions of the semiconductor chip 3 and the island5.

On the front surface of the semiconductor chip 3, pads 14 are formed byexposing parts of a wiring layer from a surface protective filmcorrespondingly to the respective leads 6. First ends of bonding wires15 are bonded to the respective pads 14. Second ends of the bondingwires 15 are bonded to the upper surfaces of the respective leads 6.Thus, the semiconductor chip 3 is electrically connected with the leads6 through the bonding wires 15.

The cutting plane line B-B extends parallelly to both of the wire 15extending from the pad 14 on the lower end of the semiconductor chip 3in FIG. 28 and the wire 15 extending from the pad 14 leftwardly adjacentto the pad 14 on the right end in FIG. 28. While the cutting plane lineB-B overlaps with these wires 15 in practice, the same is illustrated ona position slightly deviating from these wires 15, in order to renderthese wires 15 easily observable.

FIGS. 31A to 31E are schematic sectional views for illustratingproduction steps for the semiconductor device shown in FIG. 28 in order.Referring to FIGS. 31A to 31E, illustration of the leads 6 and thebonding wires 15 etc. is omitted.

First, the lead frame 2 including the island 5 provided with the recessportions 107 is prepared. The lead frame 2 is formed by pressing andpunching a copper thin plate, for example. Then, the thin film 108 madeof silver is formed on the island 5 by plating or sputtering, as shownin FIG. 31A. At this time, the thin film 108 is formed also on the innersurfaces of the recess portions 107.

Then, support bodies 113 made of solid solder are arranged on the thinfilm 108 in the recess portions 107, as shown in FIG. 31B. The supportbodies 113 are formed in shapes generally identical to those of therecess portions 107 in plan view, and have circular sections.

Thereafter a flux 114 is applied to the support bodies 113, as shown inFIG. 31C. The flux 114 may be collectively applied to the whole area ofthe upper surface of the island 5, or may be selectively applied toportions of the support bodies 113 exposed from the recess portions 107.

Then, the semiconductor chip 3 is placed on the support bodies 113, asshown in FIG. 31D. Thus, the semiconductor chip 3 is supported on thesupport bodies 113.

In a case where the support bodies 113 are lead solder, for example, aheat treatment for 30 sec. is performed under a temperature condition of340° C., whereby the support bodies 113 are melted, and the supportbodies 113 spread in the range where the thin film 108 is formed due tosurface tension and wettability thereof, as shown in FIG. 31E. Thus, aclearance between opposed portions of the semiconductor chip 3 and theisland 5 is filled up with the melted support bodies 113 (the solderbonding agent 109), and bonding between the semiconductor chip 3 and theisland 5 is achieved. At this time, the flux 114 aggregates and issolidified on the side portions of the semiconductor chip 3 whilewashing the lower surface of the semiconductor chip 3 (the front surfaceof the metal film 115) and the upper surface of the island 5, to becomethe solidified flux 110.

Thereafter the bonding wires 15 are extended between the semiconductorchip 3 and the leads 6, and the resin package 4 is formed so that onlythe rear surfaces of the island 5 and the leads 6 are exposed, wherebythe semiconductor device 1 shown in FIGS. 28 to 30 is obtained.

As hereinabove described, melted solder spreads between thesemiconductor chip 3 and the island 5 in the heat treatment, due to thesurface tension and the wettability possessed by the solder. Therefore,no load may be applied to the semiconductor chip 3 in the bonding of thesemiconductor chip 3 to the island 5, dissimilarly to a method employinga pasty adhesive for the bonding between the semiconductor chip 3 andthe island 5. No load is applied to the semiconductor chip 3, wherebyspreading of the solder by the load can be prevented. Further, thesemiconductor chip 3 and the island 5 can be bonded to each otherwithout causing remarkable protrusion of the solder from a space betweenthe semiconductor chip 3 and the island 5 by varying the magnitude, theshape and the number of the support bodies 113 in response to the sizeof the semiconductor chip 3, regardless of the size of the semiconductorchip 3. Even in a small-sized semiconductor chip 3, therefore, diebonding to the island 5 can be achieved without causing various problemsresulting from spreading of the solder.

The support bodies 113 are arranged on the thin film 108 made of silver.The wettability of the solder with respect to the silver is so highthat, when the support bodies 113 are melted in the heat treatment, themelted support bodies 113 spread in the range where the thin film 108made of silver is formed. Therefore, spreading of the support bodies 113can be controlled and occurrence of various problems resulting fromspreading of the solder can be reliably prevented by forming the thinfilm 108 made of silver.

Further, the island 5 is provided with the recess portions 107 dug downfrom the upper surface thereof, and the support bodies 113 are arrangedin the recess portions 107. Thus, the support bodies 113 can be stablyarranged on the island 5.

In addition, the flux 114 is applied to the support bodies 113, wherebythe front surfaces of the support bodies 113 can be prevented fromoxidation, and the wettability of the support bodies 113 (solder) in theheat treatment can be improved. Further, portions of the semiconductorchip 3 and the island 5 in contact with the flux 114 are washed due toaction of the flux 114, whereby the adhesiveness between thesemiconductor chip 3 and the island 5 can be further improved.

FIG. 32 is a perspective view showing another structure of the islandand the support bodies.

An island 121 shown in FIG. 32 can be employed in place of the island 5shown in FIG. 28.

The island 121 is quadrangular in plan view. The island 121 is providedwith three recess portions 122 semispherically dug down from the uppersurface thereof. The respective recess portions 122 are arranged atintervals from one another so that the inside of lines connecting thesame with one another is in the form of a triangle.

On the upper surface of the island 121, a thin film 123 made of silveris formed in a region including portions where the recess portions 122are formed in plan view. More specifically, the thin film 123 is formedin a size generally identical to that of a portion of the island 121opposed to the semiconductor chip 3 in a state where the semiconductorchip 3 (see FIG. 28) is bonded onto the island 121. The thin film 123 isformed also on the inner surfaces of the respective recess portions 122.

Support bodies 124 are arranged on the thin film 123 in the recessportions 122. The support bodies 124 are provided in the form of sphereshaving a diameter generally identical to that of the recess portions122.

When the semiconductor chip 3 is placed on the three support bodies 124and a heat treatment is performed, the support bodies 124 are melted,and the support bodies 124 (solder) spread in the range where the thinfilm 123 is formed due to surface tension and wettability thereof. Thus,a clearance between opposed portions of the semiconductor chip 3 and theisland 121 is filled up with the melted support bodies 124, and bondingbetween the semiconductor chip 3 and the island 121 is achieved.

FIG. 33 is a perspective view showing still another structure of theisland and the support bodies.

An island 131 shown in FIG. 33 can be employed in place of the island 5shown in FIG. 28.

The island 131 is quadrangular in plan view. A thin film 132 made ofsilver is formed on the upper surface of the island 131. Morespecifically, the thin film 132 is formed in a size generally identicalto a portion of the island 131 opposed to the semiconductor chip 3 in astate where the semiconductor chip 3 (see FIG. 28) is bonded onto theisland 131.

Two support bodies 133 are arranged on the thin film 132. The supportbodies 133 are provided in the form of slender plates (in the form ofribbons) in plan view, and parallelly extend at an interval from eachother.

When the semiconductor chip 3 is placed on the two support bodies 133and a heat treatment is performed, the support bodies 133 are melted,and the support bodies 133 (solder) spread in the range where the thinfilm 132 is formed due to surface tension and wettability thereof. Thus,a clearance between opposed portions of the semiconductor chip 3 and theisland 131 is filled up with the melted support bodies 133, and bondingbetween the semiconductor chip 3 and the island 131 is achieved.

While the so-called surface-mounted semiconductor device in which rearsurfaces of leads and an island are exposed from a rear surface of aresin package has been illustrated as the semiconductor device 1, thisembodiment may be applied to a resin-sealed semiconductor device inwhich leads extend toward side portions of a resin package. In otherwords, this embodiment can be widely applied to a semiconductor devicehaving a structure obtained by bonding a semiconductor chip onto anisland.

While the present invention has been described in detail byway of theembodiments thereof, it should be understood that these embodiments aremerely illustrative of the technical principles of the present inventionbut not limitative of the invention. The spirit and scope of the presentinvention are to be limited only by the appended claims.

This application corresponds to Japanese Patent Application No.2009-210776 filed with the Japan Patent Office on Sep. 11, 2009 andJapanese Patent Application No. 2009-214925 filed with the Japan PatentOffice on Sep. 16, 2009, the disclosures of which are incorporatedherein by reference.

DESCRIPTION OF THE REFERENCE NUMERALS

1 semiconductor device

3 semiconductor chip

5 island

6 lead

14 pad

15 wire

16 ball portion

17 stitch portion

107 recess portion

108 thin film

109 solder bonging agent

110 solidified flux (flux)

113 support body

114 flux

121 island

122 recess portion

123 thin film

124 support body

131 island

132 thin film

133 support body

1-20. (canceled)
 21. A semiconductor device comprising: a semiconductorchip; a lead arranged on a side portion of the semiconductor chip; and awire, whose one end and another end are bonded to the semiconductor chipand the lead respectively, having a ball portion and a stitch portionwedged in side elevational view on the semiconductor chip and the leadrespectively, wherein an angle of approach of the wire to the lead isnot less than 50°, and the length of the stitch portion is not less than33 μm.
 22. The semiconductor device according to claim 21, which is asurface-mounted type, further comprising a sealing resin sealing thesemiconductor chip, the lead and the wire.
 23. The semiconductor deviceaccording to claim 22, which is a non-leaded type, wherein the lead doesnot protrude from the sealing resin.
 24. A semiconductor devicecomprising: a semiconductor chip; a lead arranged on a side portion ofthe semiconductor chip; and a wire, whose one end and another end arebonded to the semiconductor chip and the lead respectively, having aball portion and a stitch portion wedged in side elevational view on thesemiconductor chip and the lead respectively, wherein an angle ofapproach of the wire to the lead is not less than 50°, and an angleformed by the upper surface of the stitch portion and the upper surfaceof the lead is not less than 15°.
 25. The semiconductor device accordingto claim 24, wherein the length of the stitch portion is not less than33 μm.
 26. The semiconductor device according to claim 24, which is asurface-mounted type, further comprising a sealing resin sealing thesemiconductor chip, the lead and the wire.
 27. The semiconductor deviceaccording to claim 26, which is a non-leaded type, wherein the lead doesnot protrude from the sealing resin.
 28. A semiconductor devicecomprising: a semiconductor chip; a lead arranged on a side portion ofthe semiconductor chip; and a wire, whose one end and another end arebonded to the semiconductor chip and the lead respectively, having aball portion and a stitch portion wedged in side elevational view on thesemiconductor chip and the lead respectively, wherein the length of thewire is not more than 400 μm, a difference in elevation between aportion of the semiconductor chip to which the ball portion is bondedand a portion of the lead to which the stitch portion is bonded is notless than 200 μm, and the length of the stitch portion is not less than33 μm.
 29. The semiconductor device according to claim 28, which is asurface-mounted type, further comprising a sealing resin sealing thesemiconductor chip, the lead and the wire.
 30. The semiconductor deviceaccording to claim 29, which is a non-leaded type, wherein the lead doesnot protrude from the sealing resin.
 31. A semiconductor devicecomprising: a semiconductor chip; a lead arranged on a side portion ofthe semiconductor chip; and a wire, whose one end and another end arebonded to the semiconductor chip and the lead respectively, having aball portion and a stitch portion wedged in side elevational view on thesemiconductor chip and the lead respectively, wherein the length of thewire is not more than 400 μm, a difference in elevation between aportion of the semiconductor chip to which the ball portion is bondedand a portion of the lead to which the stitch portion is bonded is notless than 200 μm, and an angle formed by the upper surface of the stitchportion and the upper surface of the lead is not less than 15°.
 32. Thesemiconductor device according to claim 31, wherein the length of thestitch portion is not less than 33 μm.
 33. The semiconductor deviceaccording to claim 31, which is a surface-mounted type, furthercomprising a sealing resin sealing the semiconductor chip, the lead andthe wire.
 34. The semiconductor device according to claim 33, which is anon-leaded type, wherein the lead does not protrude from the sealingresin.
 35. The semiconductor device according to claim 21, furthercomprising: an island to whose upper surface the semiconductor chip isbonded; and a solder bonding agent made of solder and interposed betweenthe semiconductor chip and the island for bonding the semiconductor chipand the island to each other, wherein a flux adheres to the solderbonding agent.
 36. The semiconductor device according to claim 35,wherein the island is provided with a recess portion dug down from theupper surface thereof.
 37. The semiconductor device according to claim35, wherein the island is quadrangular in plan view, and a pair oftrench-shaped recess portions dug down to extend along two opposed sidesof the quadrangular island respectively are formed on the upper surfaceof the island.
 38. The semiconductor device according to claim 36,wherein the recess portion is semicircular in section.
 39. Thesemiconductor device according to claim 36, wherein the recess portionis semispherical.
 40. A production method for a semiconductor device,comprising: a support body arranging step of arranging a support bodymade of solid solder on an island; a chip supporting step of placing asemiconductor chip on the support body for making the support bodysupport the semiconductor chip after the support body arranging step;and a bonding step of bonding the island and the semiconductor chip toeach other by melting the support body by a heat treatment after thechip supporting step.
 41. The production method for a semiconductordevice according to claim 40, further comprising a step of forming athin film made of silver on the island in advance of the support bodyarranging step, wherein the support body is arranged on the thin film inthe support body arranging step.
 42. The production method for asemiconductor device according to claim 40, wherein the island isprovided with a recess portion dug down from the upper surface thereof,and the support body is arranged in the recess portion in the supportbody arranging step.
 43. The production method for a semiconductordevice according to claim 40, further comprising a flux applying step ofapplying a flux to the support body after the support body arrangingstep, in advance of the chip supporting step.
 44. A semiconductor devicecomprising: a semiconductor chip; an island to whose upper surface thesemiconductor chip is bonded; and a solder bonding agent made of solderand interposed between the semiconductor chip and the island for bondingthe semiconductor chip and the island to each other, wherein a fluxadheres to the solder bonding agent.
 45. The semiconductor deviceaccording to claim 44, wherein the island is provided with a recessportion dug down from the upper surface thereof.
 46. The semiconductordevice according to claim 44, wherein the island is quadrangular in planview, and a pair of trench-shaped recess portions dug down to extendalong two opposed sides of the quadrangular island respectively areformed on the upper surface of the island.
 47. The semiconductor deviceaccording to claim 45, wherein the recess portion is semicircular insection.
 48. The semiconductor device according to claim 45, wherein therecess portion is semispherical.